Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 257
... coatings of MoN were studied . It was demonstrated that effective coatings could be deposited at low temperatures , that adhesion strength is a function of both precoat ion bombardment and interlayer diffusion at the coating - substrate ...
... coatings of MoN were studied . It was demonstrated that effective coatings could be deposited at low temperatures , that adhesion strength is a function of both precoat ion bombardment and interlayer diffusion at the coating - substrate ...
Page 275
... coating system . Such a configuration lends itself to multilayer coatings in which the greatest advantage may be derived from the best qualities of each . Current applica- tions of such dual - coating systems include decorative film ...
... coating system . Such a configuration lends itself to multilayer coatings in which the greatest advantage may be derived from the best qualities of each . Current applica- tions of such dual - coating systems include decorative film ...
Page 513
... coatings are fired to temperatures well above 600 ° C . It would be incorrect to say that ceramic coatings have been applied at room temperature by merely reacting , gelling , and drying the solutions . In this state , the coatings do ...
... coatings are fired to temperatures well above 600 ° C . It would be incorrect to say that ceramic coatings have been applied at room temperature by merely reacting , gelling , and drying the solutions . In this state , the coatings do ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength