Thin Film Processes, Volume 2 |
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Page 257
Most reported research for reactive arc deposition has had as its objective the
production of hard coatings suitable for wear - resistant or decorative applications
. The literature therefore concentrates on nitrides , carbides , and carbonitrides of
...
Most reported research for reactive arc deposition has had as its objective the
production of hard coatings suitable for wear - resistant or decorative applications
. The literature therefore concentrates on nitrides , carbides , and carbonitrides of
...
Page 272
Rickerby and Wood ( 174 ) have demonstrated that ion plating produces the
desired coating properties in their studies of sputter ion - plating of the MCraiY
materials . It was demonstrated that such coatings were sufficiently resistant to ...
Rickerby and Wood ( 174 ) have demonstrated that ion plating produces the
desired coating properties in their studies of sputter ion - plating of the MCraiY
materials . It was demonstrated that such coatings were sufficiently resistant to ...
Page 513
Water and solvent escape through interconnected pores which remain open at
the surface until the coatings are fired to temperatures well above 600°C . It
would be incorrect to say that ceramic coatings have been applied at room
temperature ...
Water and solvent escape through interconnected pores which remain open at
the surface until the coatings are fired to temperatures well above 600°C . It
would be incorrect to say that ceramic coatings have been applied at room
temperature ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer