Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 295
... complex in the presence of impurities and additives and in the case of multicomponent films . Nucleation phenomena are exploited in selective film growth . For example , by appropriately balancing the Cl amount in the Si - H - Cl sys ...
... complex in the presence of impurities and additives and in the case of multicomponent films . Nucleation phenomena are exploited in selective film growth . For example , by appropriately balancing the Cl amount in the Si - H - Cl sys ...
Page 388
... complex than that of TMG and involves a surface B - hydrogen elimination reaction and the evapora- tion of a Ga species , possibly Ga ( C2H5 ) 2 [ 142 , 143 ] . The surface reactions of alkylaluminum sources are another example of the ...
... complex than that of TMG and involves a surface B - hydrogen elimination reaction and the evapora- tion of a Ga species , possibly Ga ( C2H5 ) 2 [ 142 , 143 ] . The surface reactions of alkylaluminum sources are another example of the ...
Page 417
... complex energy level structure form- ing DX centers [ 215 , 216 ] . The term " DX " is applied because these prop- erties were initially attributed to a donor - defect complex . Besides the shallow donor states , additional states can ...
... complex energy level structure form- ing DX centers [ 215 , 216 ] . The term " DX " is applied because these prop- erties were initially attributed to a donor - defect complex . Besides the shallow donor states , additional states can ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength