Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 110
... composition of the deposited film is controlled by adjusting the evaporation rate of the respective elements . In elaborate systems , separate deposition - rate monitors are used with appropriate feed- back networks to control the ...
... composition of the deposited film is controlled by adjusting the evaporation rate of the respective elements . In elaborate systems , separate deposition - rate monitors are used with appropriate feed- back networks to control the ...
Page 263
... composition in the arc process is not just a function of the rate of removal of material from the source . Resputtering at the substrate will have a significant effect on alloy composition if the sputtering yields of the alloy ...
... composition in the arc process is not just a function of the rate of removal of material from the source . Resputtering at the substrate will have a significant effect on alloy composition if the sputtering yields of the alloy ...
Page 422
... composition for ZnSe , S1- , compared to experimental data [ 229 ] . The solid composition is a nonlinear function of the vapor - phase composition . ( After Ref . 219. ) 1 - x x Hg1 - Cd Te , but it can only be used at temperatures ...
... composition for ZnSe , S1- , compared to experimental data [ 229 ] . The solid composition is a nonlinear function of the vapor - phase composition . ( After Ref . 219. ) 1 - x x Hg1 - Cd Te , but it can only be used at temperatures ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength