Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
From inside the book
Results 1-3 of 90
Page 110
stochiometry close to the source composition by evaporation-based techniques.
1. Co-evaporation Using Multiple Source This technique involves simultaneous
co-evaporation of the constitutive elements of the alloy. The composition of the ...
stochiometry close to the source composition by evaporation-based techniques.
1. Co-evaporation Using Multiple Source This technique involves simultaneous
co-evaporation of the constitutive elements of the alloy. The composition of the ...
Page 263
C. Alloy Deposition The reproduction of alloy composition from a deposition
source to a thin film on a substrate posed significant problems historically. The
advent of sputtering, and subsequently high-rate magnetron sputtering,
overcame ...
C. Alloy Deposition The reproduction of alloy composition from a deposition
source to a thin film on a substrate posed significant problems historically. The
advent of sputtering, and subsequently high-rate magnetron sputtering,
overcame ...
Page 411
There are many alloy semiconductor systems that can form lattice material with a
convenient or useful substrate at only one unique composition. The ternary
system formed from InAs and GaAs can span the range of bandgap from 0.36 to
1.45 ...
There are many alloy semiconductor systems that can form lattice material with a
convenient or useful substrate at only one unique composition. The ternary
system formed from InAs and GaAs can span the range of bandgap from 0.36 to
1.45 ...
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering structure substrate substrate temperature susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength
Bibliographic information
| Title | Thin film processes II Volume 2 of Thin Film Processes, Werner Kern |
| Authors | John L. Vossen, Werner Kern |
| Editors | John L. Vossen, Werner Kern |
| Edition | illustrated |
| Publisher | Academic Press, 1991 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282513, 9780127282510 |
| Length | 866 pages |
| Subjects | › › Electronic books Science / Physics Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Material Science Thin film devices Thin films |
| Export Citation | BiBTeX EndNote RefMan |