Thin Film Processes, Volume 2 |
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Page 110
stochiometry close to the source composition by evaporation - based techniques .
1 . Co - evaporation Using Multiple Source This technique involves simultaneous
co - evaporation of the constitutive elements of the alloy . The composition of ...
stochiometry close to the source composition by evaporation - based techniques .
1 . Co - evaporation Using Multiple Source This technique involves simultaneous
co - evaporation of the constitutive elements of the alloy . The composition of ...
Page 263
C . Alloy Deposition The reproduction of alloy composition from a deposition
source to a thin film on a substrate posed significant problems historically . The
advent of sputtering , and subsequently high - rate magnetron sputtering ,
overcame ...
C . Alloy Deposition The reproduction of alloy composition from a deposition
source to a thin film on a substrate posed significant problems historically . The
advent of sputtering , and subsequently high - rate magnetron sputtering ,
overcame ...
Page 411
Specific compositions of this alloy system can be found to yield a desired direct
bandgap yet still with a lattice parameter equal to ... The growth of the specific
lattice - matched composition can take place by a layerby - layer growth
mechanism .
Specific compositions of this alloy system can be found to yield a desired direct
bandgap yet still with a lattice parameter equal to ... The growth of the specific
lattice - matched composition can take place by a layerby - layer growth
mechanism .
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer