Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 112
John L. Vossen, Werner Kern. C. Deposition of Compounds Deposition of compounds can be performed in two ways : direct evap- oration , in which the composition of the ... COMPOUNDS Compound Vapor species 112 C. V. DESHPANDEY AND R. F. BUNSHAH.
John L. Vossen, Werner Kern. C. Deposition of Compounds Deposition of compounds can be performed in two ways : direct evap- oration , in which the composition of the ... COMPOUNDS Compound Vapor species 112 C. V. DESHPANDEY AND R. F. BUNSHAH.
Page 117
... compounds are overcome in reactive evaporation , where a metal is evaporated in the presence of the reactive gas . The compound is formed by reaction of the evaporating metal species with the molecules of the reactive gas . Though this ...
... compounds are overcome in reactive evaporation , where a metal is evaporated in the presence of the reactive gas . The compound is formed by reaction of the evaporating metal species with the molecules of the reactive gas . Though this ...
Page 371
... compound semiconductor devices . Limited substrate areas and poor control over the growth of very thin layers has limited the extension of LPE to the new , more aggressive device structures . Vapor phase epitaxy ( VPE ) of com- pound ...
... compound semiconductor devices . Limited substrate areas and poor control over the growth of very thin layers has limited the extension of LPE to the new , more aggressive device structures . Vapor phase epitaxy ( VPE ) of com- pound ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength