Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 112
John L. Vossen, Werner Kern. C. Deposition of Compounds Deposition of compounds can be performed in two ways : direct evap- oration , in which the composition of the evaporant is the same as that of the compound that is to be deposited ...
John L. Vossen, Werner Kern. C. Deposition of Compounds Deposition of compounds can be performed in two ways : direct evap- oration , in which the composition of the evaporant is the same as that of the compound that is to be deposited ...
Page 158
... compounds , since its nonequilibrium growth aspect tends to reduce self - compensation in the compounds . Because of their higher vapor pressure , both the source temperature and the growth temperature are lower than those of the III ...
... compounds , since its nonequilibrium growth aspect tends to reduce self - compensation in the compounds . Because of their higher vapor pressure , both the source temperature and the growth temperature are lower than those of the III ...
Page 377
... compounds [ 7 ] , a large number of organometallic compounds have been explored for the deposition and doping of III - V and II - VI compound semiconductors . The search for precursors ... COMPOUND SEMICONDUCTORS 377 Organometallic Compounds.
... compounds [ 7 ] , a large number of organometallic compounds have been explored for the deposition and doping of III - V and II - VI compound semiconductors . The search for precursors ... COMPOUND SEMICONDUCTORS 377 Organometallic Compounds.
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength