Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 94
... contamination . Ag does not wet W. Can be kept in basket by binding fine platinum wire on outside . Tantalum 2,996 = 2,820 ) ( v.p. 1 μm Hg at Tellurium 452 ( v.p. = 760 mm Hg at 1,390 ) W , Ta , Mo , Alumina crucible Cb , Ni , Fe ...
... contamination . Ag does not wet W. Can be kept in basket by binding fine platinum wire on outside . Tantalum 2,996 = 2,820 ) ( v.p. 1 μm Hg at Tellurium 452 ( v.p. = 760 mm Hg at 1,390 ) W , Ta , Mo , Alumina crucible Cb , Ni , Fe ...
Page 228
... contamination , these spots display little dependence on the cathode material ; the behavior of type 2 spots , by ... contaminated to a clean surface during arcing can lead to 228 PHILIP C. JOHNSON.
... contamination , these spots display little dependence on the cathode material ; the behavior of type 2 spots , by ... contaminated to a clean surface during arcing can lead to 228 PHILIP C. JOHNSON.
Page 700
... Contamination and Damage Contamination and damage are two undesired side - effects that one either must learn to live with , or else must minimize , in order to take advantage of the very many unique , useful features plasma - assisted ...
... Contamination and Damage Contamination and damage are two undesired side - effects that one either must learn to live with , or else must minimize , in order to take advantage of the very many unique , useful features plasma - assisted ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength