Thin Film Processes, Volume 2 |
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Page 224
F . Current Densities The current density of the cathode spot depends upon a
range of parameters including the cathode material , the type of cathode spot ,
and the current growth rate . Mitterauer ( 40 ) found the current densities quoted
by ...
F . Current Densities The current density of the cathode spot depends upon a
range of parameters including the cathode material , the type of cathode spot ,
and the current growth rate . Mitterauer ( 40 ) found the current densities quoted
by ...
Page 757
1 ) where ji is the ion current density in A / m2 , w is the atomic or molecular
weight of the target material , Y is the sputter yield in atoms or molecules per ion ,
and p is the density of the target material in kg / m " . For most etching
applications , it ...
1 ) where ji is the ion current density in A / m2 , w is the atomic or molecular
weight of the target material , Y is the sputter yield in atoms or molecules per ion ,
and p is the density of the target material in kg / m " . For most etching
applications , it ...
Page 786
If the laser power density is sufficiently high , a plasma is formed at the surface ( 8
, 9 ) . The critical factor for producng ablation is the laser power density , i . e . ,
the rate of deposition of energy , not just the total energy deposited . A threshold ...
If the laser power density is sufficiently high , a plasma is formed at the surface ( 8
, 9 ) . The critical factor for producng ablation is the laser power density , i . e . ,
the rate of deposition of energy , not just the total energy deposited . A threshold ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer