Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
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Page 224
F. Current Densities The current density of the cathode spot depends upon a
range of parameters including the cathode material, the type of cathode spot, and
the current growth rate. Mitterauer [40] found the current densities quoted by ...
F. Current Densities The current density of the cathode spot depends upon a
range of parameters including the cathode material, the type of cathode spot, and
the current growth rate. Mitterauer [40] found the current densities quoted by ...
Page 757
The etch rate, s, in m/s can be obtained from the sputter yield by using j = 1.04 xl0
~8;> Y/p, (3.1) where /j is the ion current density in A/m2, w is the atomic or
molecular weight of the target material, Y is the sputter yield in atoms or
molecules per ...
The etch rate, s, in m/s can be obtained from the sputter yield by using j = 1.04 xl0
~8;> Y/p, (3.1) where /j is the ion current density in A/m2, w is the atomic or
molecular weight of the target material, Y is the sputter yield in atoms or
molecules per ...
Page 786
If the laser power density is sufficiently high, a plasma is formed at the surface [8,
9]. The critical factor for producng ablation is the laser power density, i.e. , the rate
of deposition of energy, not just the total energy deposited. A threshold power ...
If the laser power density is sufficiently high, a plasma is formed at the surface [8,
9]. The critical factor for producng ablation is the laser power density, i.e. , the rate
of deposition of energy, not just the total energy deposited. A threshold power ...
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering structure substrate substrate temperature susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength
Bibliographic information
| Title | Thin film processes II Volume 2 of Thin Film Processes, Werner Kern |
| Authors | John L. Vossen, Werner Kern |
| Editors | John L. Vossen, Werner Kern |
| Edition | illustrated |
| Publisher | Academic Press, 1991 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282513, 9780127282510 |
| Length | 866 pages |
| Subjects | › › Electronic books Science / Physics Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Material Science Thin film devices Thin films |
| Export Citation | BiBTeX EndNote RefMan |