Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 224
John L. Vossen, Werner Kern. F. Current Densities The current density of the cathode spot depends upon a range of parameters including the cathode material , the type of cathode spot , and the current growth rate . Mitterauer [ 40 ] ...
John L. Vossen, Werner Kern. F. Current Densities The current density of the cathode spot depends upon a range of parameters including the cathode material , the type of cathode spot , and the current growth rate . Mitterauer [ 40 ] ...
Page 771
... density are available at that ion energy . The steep variation of ion - beam current with voltage , together with ... density also should be examined . The most common way of giving ion current density is at the ion optics . This is done ...
... density are available at that ion energy . The steep variation of ion - beam current with voltage , together with ... density also should be examined . The most common way of giving ion current density is at the ion optics . This is done ...
Page 786
... density is sufficiently high , a plasma is formed at the surface [ 8 , 9 ] . The critical factor for producng ablation is the laser power density , i.e. , the rate of deposition of energy , not just the total energy deposited . A ...
... density is sufficiently high , a plasma is formed at the surface [ 8 , 9 ] . The critical factor for producng ablation is the laser power density , i.e. , the rate of deposition of energy , not just the total energy deposited . A ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength