Thin Film Processes, Volume 2 |
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Page 234
The rate of erosion for a given material was found to have only a limited
dependence on the arc current for most materials ... and Cd cathodes and found
that cathode erosion was dependent on the TABLE VII DEGREE OF IONIZATION
OF THE ...
The rate of erosion for a given material was found to have only a limited
dependence on the arc current for most materials ... and Cd cathodes and found
that cathode erosion was dependent on the TABLE VII DEGREE OF IONIZATION
OF THE ...
Page 687
... energy of the impinging electron , m is its mass , o is the energy - dependent
reaction cross - section , and f ( e ) is the electron distribution function .
Unfortunately , information on f ( e ) and o is generally unavailable for the types of
molecules ...
... energy of the impinging electron , m is its mass , o is the energy - dependent
reaction cross - section , and f ( e ) is the electron distribution function .
Unfortunately , information on f ( e ) and o is generally unavailable for the types of
molecules ...
Page 730
But the fidelity of a pattern transfer process ( e . g . , how well a particular masking
pattern can be transferred into a substrate surface ) is not only dependent on
these physical effects due to ion - surface interactions , but also on purely
chemical ...
But the fidelity of a pattern transfer process ( e . g . , how well a particular masking
pattern can be transferred into a substrate surface ) is not only dependent on
these physical effects due to ion - surface interactions , but also on purely
chemical ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer