Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 70
... developed in this form for use in the above- mentioned ion thruster engines for spacecraft , as a replacement for fila- ments . Cathodes were developed that had lifetimes exceeding 10,000 hours . The cathodes were used to supply ...
... developed in this form for use in the above- mentioned ion thruster engines for spacecraft , as a replacement for fila- ments . Cathodes were developed that had lifetimes exceeding 10,000 hours . The cathodes were used to supply ...
Page 169
... developed as a research tool for the III - V semiconductors , the technique has been applied for the growth of a truly impressive list of materials and devices ; its utilization has cut across traditional material boundaries . The grown ...
... developed as a research tool for the III - V semiconductors , the technique has been applied for the growth of a truly impressive list of materials and devices ; its utilization has cut across traditional material boundaries . The grown ...
Page 514
... developed for this application . The index of refraction in this case can be graded by changes in the composition , changes in the microstructure , and changes in the porosity . In comparison to Vycor TM , the process developed at ...
... developed for this application . The index of refraction in this case can be graded by changes in the composition , changes in the microstructure , and changes in the porosity . In comparison to Vycor TM , the process developed at ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength