Thin Film Processes, Volume 2 |
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Page 371
This growth technique was used in the early development of many compound
semiconductor devices . ... This technique has typically been limited to the growth
of thick , high - purity epitaxial layers suitable for many device applications .
This growth technique was used in the early development of many compound
semiconductor devices . ... This technique has typically been limited to the growth
of thick , high - purity epitaxial layers suitable for many device applications .
Page 423
High - purity semiconductors are often essential to the fabrication of device such
as modulation - doped field - effect transistors . Studies of novel physical effects ,
such as the fractional Hall effect , require high - purity materials for their ...
High - purity semiconductors are often essential to the fabrication of device such
as modulation - doped field - effect transistors . Studies of novel physical effects ,
such as the fractional Hall effect , require high - purity materials for their ...
Page 613
B . Device Applications The characteristics of the remote PECVD process that are
important in device applications include the ... 55 , 58 , 59 , 93 ] ; ( 2 ) low -
temperature deposition of device - quality intrinsic , n - type and p - type
amorphous Si ...
B . Device Applications The characteristics of the remote PECVD process that are
important in device applications include the ... 55 , 58 , 59 , 93 ] ; ( 2 ) low -
temperature deposition of device - quality intrinsic , n - type and p - type
amorphous Si ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer