Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 192
... dielectric compound . Figure 4 is useful for a qualitative description of the two modes of reactive sputtering . Here , , and O , are , respectively , the degree of target coverage and degree of substrate coverage by dielectric compound ...
... dielectric compound . Figure 4 is useful for a qualitative description of the two modes of reactive sputtering . Here , , and O , are , respectively , the degree of target coverage and degree of substrate coverage by dielectric compound ...
Page 324
... dielectric constant dielectrics have recently received attention for applications as storage capacitors in memory cells and as a gate insulator in ultrahigh - density integrated circuits . CVD , especially from organometallic precursors ...
... dielectric constant dielectrics have recently received attention for applications as storage capacitors in memory cells and as a gate insulator in ultrahigh - density integrated circuits . CVD , especially from organometallic precursors ...
Page 611
... dielectric constituents [ 37 , 95 , 96 ] , and it has been specifically taken into account in the fabrication of thin film transistors ( TFTs ) formed with a - Si : H as the channel material and Si3N4 as the gate dielectric [ 37,95 ] ...
... dielectric constituents [ 37 , 95 , 96 ] , and it has been specifically taken into account in the fabrication of thin film transistors ( TFTs ) formed with a - Si : H as the channel material and Si3N4 as the gate dielectric [ 37,95 ] ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength