Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 112
... direct evap- oration , in which the composition of the evaporant is the same as that of the compound that is to be ... direct and reactive processes in somewhat greater detail . 1. Direct Evaporation When a compound is heated ...
... direct evap- oration , in which the composition of the evaporant is the same as that of the compound that is to be ... direct and reactive processes in somewhat greater detail . 1. Direct Evaporation When a compound is heated ...
Page 566
... direct PECVD process . In a conventional direct PECVD process , all of the process gases , reactants as well as any diluents , are subjected to direct plasma excitation , and the substrate for thin film deposition is positioned in the ...
... direct PECVD process . In a conventional direct PECVD process , all of the process gases , reactants as well as any diluents , are subjected to direct plasma excitation , and the substrate for thin film deposition is positioned in the ...
Page 570
... direct and remote processes . In the examples presented below , all of process gases are subjected to direct plasma ex- citation , but the substrate is positioned outside of the plasma glow . For example , in capacitively coupled ...
... direct and remote processes . In the examples presented below , all of process gases are subjected to direct plasma ex- citation , but the substrate is positioned outside of the plasma glow . For example , in capacitively coupled ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength