Thin Film Processes, Volume 2 |
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Page 112
C . Deposition of Compounds Deposition of compounds can be performed in two
ways : direct evaporation , in which the composition of the evaporant is the same
as that of the compound that is to be deposited ; and reactive evaporation , in ...
C . Deposition of Compounds Deposition of compounds can be performed in two
ways : direct evaporation , in which the composition of the evaporant is the same
as that of the compound that is to be deposited ; and reactive evaporation , in ...
Page 566
In a conventional direct PECVD process , all of the process gases , reactants as
well as any diluents , are subjected to direct plasma excitation , and the substrate
for thin film deposition is positioned in the plasma excitation region [ 3 , 4 ] .
In a conventional direct PECVD process , all of the process gases , reactants as
well as any diluents , are subjected to direct plasma excitation , and the substrate
for thin film deposition is positioned in the plasma excitation region [ 3 , 4 ] .
Page 570
Thin films of a - Si : H , and of silicon oxides and nitrides , deposited by remote
PECVD can be qualitatively different from the direct PECVD films , with respect to
the concentrations of bonded hydrogen , which are always significantly lower at ...
Thin films of a - Si : H , and of silicon oxides and nitrides , deposited by remote
PECVD can be qualitatively different from the direct PECVD films , with respect to
the concentrations of bonded hydrogen , which are always significantly lower at ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |