Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 25
... discharge can be much the same as that of the dc discharge . Usually they are two electrodes , of which one may be tied to ground . Some aspects of the rf discharge depend critically on the relative areas of these two electrodes . The ...
... discharge can be much the same as that of the dc discharge . Usually they are two electrodes , of which one may be tied to ground . Some aspects of the rf discharge depend critically on the relative areas of these two electrodes . The ...
Page 64
... discharge , in which electrons were pro- duced as secondaries by ion bombardment of the cathode . The discharge current as a function of voltage in these plasmas has three distinct modes , as shown in Fig . 53. At low voltage ( region I ) ...
... discharge , in which electrons were pro- duced as secondaries by ion bombardment of the cathode . The discharge current as a function of voltage in these plasmas has three distinct modes , as shown in Fig . 53. At low voltage ( region I ) ...
Page 75
... discharge current ( a reasonable assumption ) , then the emission levels of various species can be predicted . For example , emission from the background gas should be proportional to the discharge current to the first power , at least ...
... discharge current ( a reasonable assumption ) , then the emission levels of various species can be predicted . For example , emission from the background gas should be proportional to the discharge current to the first power , at least ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength