Thin Film Processes, Volume 2 |
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Page 28
This can be a major contamination source for samples in the discharge . In the
asymmetric case , the levels of wall bombardment are at sufficiently low energy in
most cases that no sputtering occurs . In both cases , however , it is important to ...
This can be a major contamination source for samples in the discharge . In the
asymmetric case , the levels of wall bombardment are at sufficiently low energy in
most cases that no sputtering occurs . In both cases , however , it is important to ...
Page 29
In the dc case , the electrons only responded to the weak , almost static fields
within the discharge . In the rf case , the oscillating nature of the applied field is
more efficient at increasing the net energy of the electrons . A second
phenomenon ...
In the dc case , the electrons only responded to the weak , almost static fields
within the discharge . In the rf case , the oscillating nature of the applied field is
more efficient at increasing the net energy of the electrons . A second
phenomenon ...
Page 75
If one assumes that the electron density is proportional to the discharge current (
a reasonable assumption ) , then the emission levels of various species can be
predicted . For example , emission from the background gas should be ...
If one assumes that the electron density is proportional to the discharge current (
a reasonable assumption ) , then the emission levels of various species can be
predicted . For example , emission from the background gas should be ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer