Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 29
... power . In general , lower bias voltage correlates with higher effective discharge currents . The current flow in these discharges is space - charge limited across the cathode sheath . Unfortunately , as the discharge voltage is changed ...
... power . In general , lower bias voltage correlates with higher effective discharge currents . The current flow in these discharges is space - charge limited across the cathode sheath . Unfortunately , as the discharge voltage is changed ...
Page 36
... powers . As more and more power is applied to the rf discharge , the applied voltage tends to rise rapidly . Above 1,000-2,000 eV , the sputtering process becomes much less efficient ( per watt ) , and as such , the deposition rate will ...
... powers . As more and more power is applied to the rf discharge , the applied voltage tends to rise rapidly . Above 1,000-2,000 eV , the sputtering process becomes much less efficient ( per watt ) , and as such , the deposition rate will ...
Page 75
... discharge current ( a reasonable assumption ) , then the emission levels of various species can be predicted . For example , emission from the background gas should be proportional to the discharge current to the first power , at least ...
... discharge current ( a reasonable assumption ) , then the emission levels of various species can be predicted . For example , emission from the background gas should be proportional to the discharge current to the first power , at least ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength