Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 309
... discussed by Ouazzani and Rosenberger [ 200 ] . These authors also show that the wall temperature is critical to predicting transverse film thickness variations . This is further demon- strated in three - dimensional simulations of ...
... discussed by Ouazzani and Rosenberger [ 200 ] . These authors also show that the wall temperature is critical to predicting transverse film thickness variations . This is further demon- strated in three - dimensional simulations of ...
Page 372
... discussed in a subsequent section . There are many labels for conventional OMVPE commonly used in the literature , including organometallic chemical vapor deposition ( OMCVD ) , metalorganic vapor phase epitaxy ( MOVPE ) , and ...
... discussed in a subsequent section . There are many labels for conventional OMVPE commonly used in the literature , including organometallic chemical vapor deposition ( OMCVD ) , metalorganic vapor phase epitaxy ( MOVPE ) , and ...
Page 471
... discussed . 1. Lamps The relatively low cost , high duty cycle , and reliability of discharge lamps have already made them attractive for commercial applications . Low intensity is the only major drawback of lamps for broad area ...
... discussed . 1. Lamps The relatively low cost , high duty cycle , and reliability of discharge lamps have already made them attractive for commercial applications . Low intensity is the only major drawback of lamps for broad area ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength