Thin Film Processes, Volume 2 |
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Page 63
5 eV ) ion temperatures are more likely . VIII . BROAD - BEAM ION SOURCES
Although the topic of broad - beam ion sources will be discussed in more detail in
a later chapter ( Chapter V . 2 ) , it is appropriate to compare the plasma
operation ...
5 eV ) ion temperatures are more likely . VIII . BROAD - BEAM ION SOURCES
Although the topic of broad - beam ion sources will be discussed in more detail in
a later chapter ( Chapter V . 2 ) , it is appropriate to compare the plasma
operation ...
Page 309
In the case of low flow rates ( Re < 15 ) or when return flows are present , it
becomes necessary to use a fully three - dimensional model , as discussed by
Ouazzani and Rosenberger [ 200 ] . These authors also show that the wall
temperature ...
In the case of low flow rates ( Re < 15 ) or when return flows are present , it
becomes necessary to use a fully three - dimensional model , as discussed by
Ouazzani and Rosenberger [ 200 ] . These authors also show that the wall
temperature ...
Page 372
... compounds have been used in OMVPE to produce complex semiconductor
systems , such as ( Al , Ga , In ) As . Source properties and decomposition and
reaction behavior of these compounds will be discussed in a subsequent section
.
... compounds have been used in OMVPE to produce complex semiconductor
systems , such as ( Al , Ga , In ) As . Source properties and decomposition and
reaction behavior of these compounds will be discussed in a subsequent section
.
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |