Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 161
... doping requires an evaporation temperature of 1,300-1800 ° C , so direct evaporation is difficult . As a result ... doping that produced a sharp profile and room - temperature bulk - like mobility . Levels above 1020 / cm3 have been ...
... doping requires an evaporation temperature of 1,300-1800 ° C , so direct evaporation is difficult . As a result ... doping that produced a sharp profile and room - temperature bulk - like mobility . Levels above 1020 / cm3 have been ...
Page 431
... doping with cyclopentadienyl Li [ 263 ] and N doping has been done with NH3 [ 264 ] , but the carrier concentrations were very low ( ~ 1014 cm3 ) . Relatively large hole concentrations ( ~ 1017 cm - 3 ) have been obtained by codoping Li ...
... doping with cyclopentadienyl Li [ 263 ] and N doping has been done with NH3 [ 264 ] , but the carrier concentrations were very low ( ~ 1014 cm3 ) . Relatively large hole concentrations ( ~ 1017 cm - 3 ) have been obtained by codoping Li ...
Page 432
... doping transients can be traced to an interaction between the dopant precursor and the internal surfaces of the OMVPE system . These doping tails derive from adsorption and desorption of the dopant precursor from the interior of the ...
... doping transients can be traced to an interaction between the dopant precursor and the internal surfaces of the OMVPE system . These doping tails derive from adsorption and desorption of the dopant precursor from the interior of the ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength