Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 161
... doping requires an evaporation temperature of 1,300-1800 ° C , so direct evaporation is difficult . As a result ... doping . that produced a sharp profile and room - temperature bulk - like mobility . Levels above 1020 / cm3 have been ...
... doping requires an evaporation temperature of 1,300-1800 ° C , so direct evaporation is difficult . As a result ... doping . that produced a sharp profile and room - temperature bulk - like mobility . Levels above 1020 / cm3 have been ...
Page 431
... doping with cyclopentadienyl Li [ 263 ] and N doping has been done with NH3 [ 264 ] , but the carrier concentrations were very low ( ~ 1014 cm3 ) . Relatively large hole concentrations ( ~ 1017 cm3 ) have been obtained by codoping Li ...
... doping with cyclopentadienyl Li [ 263 ] and N doping has been done with NH3 [ 264 ] , but the carrier concentrations were very low ( ~ 1014 cm3 ) . Relatively large hole concentrations ( ~ 1017 cm3 ) have been obtained by codoping Li ...
Page 432
... doping transients can be traced to an interaction between the dopant precursor and the internal surfaces of the OMVPE system . These doping tails derive from adsorption and desorption of the dopant precursor from the interior of the ...
... doping transients can be traced to an interaction between the dopant precursor and the internal surfaces of the OMVPE system . These doping tails derive from adsorption and desorption of the dopant precursor from the interior of the ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength