Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 40
... electric and magnetic fields , in particular if they are perpendicular to each other . This is shown in Fig . 24. Here there is a constant electric field oriented vertically , and a magnetic field that is oriented normal to both the ...
... electric and magnetic fields , in particular if they are perpendicular to each other . This is shown in Fig . 24. Here there is a constant electric field oriented vertically , and a magnetic field that is oriented normal to both the ...
Page 44
... electric field and magnetic field are parallel , and Ê × В effects are not present . If the magnetic field is oriented parallel to the cathode surface , and hence the electric field , Ē × В effects will be observed . In the case shown ...
... electric field and magnetic field are parallel , and Ê × В effects are not present . If the magnetic field is oriented parallel to the cathode surface , and hence the electric field , Ē × В effects will be observed . In the case shown ...
Page 814
... electric field vector of a polarized or even partially polarized beam relative to the scanning velocity vector can have a pronounced effect on the shape of a deep trench . When the electric field vector lies in the same direction as the ...
... electric field vector of a polarized or even partially polarized beam relative to the scanning velocity vector can have a pronounced effect on the shape of a deep trench . When the electric field vector lies in the same direction as the ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength