Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 13
... electrons to move in response to a perturbation is on the order of the time it takes an electron to move a Debye length . This time is just the Debye length ( Eq . ( 1.1 ) ) , divided by the electron velocity . It is also likely that the ...
... electrons to move in response to a perturbation is on the order of the time it takes an electron to move a Debye length . This time is just the Debye length ( Eq . ( 1.1 ) ) , divided by the electron velocity . It is also likely that the ...
Page 103
... electron - beam - heated work - accelerated sources are shown in Fig . 12. In the close cathode gun shown in Fig . 12 , the electron emitter is exposed directly to the molten evaporant . This leads to droplet impingement from the molten ...
... electron - beam - heated work - accelerated sources are shown in Fig . 12. In the close cathode gun shown in Fig . 12 , the electron emitter is exposed directly to the molten evaporant . This leads to droplet impingement from the molten ...
Page 528
... electron velocity and the inelastic collision cross - section . The cross - section of an electron / particle inelastic collision is proportional to the probability that this inelastic collision will occur and is a function of the electron ...
... electron velocity and the inelastic collision cross - section . The cross - section of an electron / particle inelastic collision is proportional to the probability that this inelastic collision will occur and is a function of the electron ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength