Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 18
... energy tail of the Maxwellian electron distribution may also have sufficient energy to ionize background gas atoms . Often , this latter mechanism can be the dominant ionization mechanism , although the primary energy source to the ...
... energy tail of the Maxwellian electron distribution may also have sufficient energy to ionize background gas atoms . Often , this latter mechanism can be the dominant ionization mechanism , although the primary energy source to the ...
Page 28
... energy ( half the peak - to- peak voltage ) , while the walls of the chamber and the grounded counter- electrode are bombarded at very low energy . In this case , there is a net removal of material from the powered electrode by ...
... energy ( half the peak - to- peak voltage ) , while the walls of the chamber and the grounded counter- electrode are bombarded at very low energy . In this case , there is a net removal of material from the powered electrode by ...
Page 528
... energy . If the energy of the electron is lower than the required threshold energy , the collision cross section is zero . The rate coefficient k can be calculated by using the following equation [ 57 ] : 00 2E \ 1/2 me k- ( + ) k1 = σ ...
... energy . If the energy of the electron is lower than the required threshold energy , the collision cross section is zero . The rate coefficient k can be calculated by using the following equation [ 57 ] : 00 2E \ 1/2 me k- ( + ) k1 = σ ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength