Thin Film Processes, Volume 2 |
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Page 18
The secondary electrons are accelerated across the sheath into the plasma ; in
doing so , they gain enough energy to cause the ionization of a number of neutral
gas atoms . In the case of the applied electric field excitation of the plasma ...
The secondary electrons are accelerated across the sheath into the plasma ; in
doing so , they gain enough energy to cause the ionization of a number of neutral
gas atoms . In the case of the applied electric field excitation of the plasma ...
Page 28
The energy of the ions as they bombard the cathode will be roughly the time -
average difference between the plasma potential and the dc bias potential on the
cathode . For the symmetric case , the average ion energy will be approximately ...
The energy of the ions as they bombard the cathode will be roughly the time -
average difference between the plasma potential and the dc bias potential on the
cathode . For the symmetric case , the average ion energy will be approximately ...
Page 528
We have noted that only high - energy electrons can participate in inelastic
collisions . To take this into account , ky in Eq . ( 2 . 1 ) needs to be defined in
terms of the electron velocity and the inelastic collision cross - section . The cross
- section ...
We have noted that only high - energy electrons can participate in inelastic
collisions . To take this into account , ky in Eq . ( 2 . 1 ) needs to be defined in
terms of the electron velocity and the inelastic collision cross - section . The cross
- section ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer