Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 336
... epitaxial lateral overgrowth [ 53 ] . By varying the source concentrations and addition of HCl , the etching action of chlorine- containing compounds ( e.g. , HCl ) formed during the deposition process , or intentionally added HCl , may ...
... epitaxial lateral overgrowth [ 53 ] . By varying the source concentrations and addition of HCl , the etching action of chlorine- containing compounds ( e.g. , HCl ) formed during the deposition process , or intentionally added HCl , may ...
Page 399
... epitaxial materials . These layers can range from several microns in thickness to only a few nanometers , as in quantum - well - based devices . The composition and impurity levels - for both intentional and uninten- tional impurities ...
... epitaxial materials . These layers can range from several microns in thickness to only a few nanometers , as in quantum - well - based devices . The composition and impurity levels - for both intentional and uninten- tional impurities ...
Page 547
... epitaxial temper- ature of 1,050 ° C . Reducing the system pressure to 1 torr allowed epitaxial growth down to 850 ° C , but the films contained many stacking faults . Surface treatment prior to epitaxy and gas purity were identified as ...
... epitaxial temper- ature of 1,050 ° C . Reducing the system pressure to 1 torr allowed epitaxial growth down to 850 ° C , but the films contained many stacking faults . Surface treatment prior to epitaxy and gas purity were identified as ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength