Thin Film Processes, Volume 2 |
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Page 336
The technique is used for a wide variety of applications in VLSI processing ( 416 )
and in making SOI - based devices through a modified process known as
epitaxial lateral overgrowth ( 53 ) . By varying the source concentrations and
addition ...
The technique is used for a wide variety of applications in VLSI processing ( 416 )
and in making SOI - based devices through a modified process known as
epitaxial lateral overgrowth ( 53 ) . By varying the source concentrations and
addition ...
Page 399
Most of these devices possess several thin layers of epitaxial materials . These
layers can range from several microns in thickness to only a few nanometers , as
in quantum - well - based devices . The composition and impurity levels — for ...
Most of these devices possess several thin layers of epitaxial materials . These
layers can range from several microns in thickness to only a few nanometers , as
in quantum - well - based devices . The composition and impurity levels — for ...
Page 547
Damage generation may degrade the structural and / or electrical quality of the
epitaxial layers through formation of extended defects ( e . g . , stacking faults or
dislocations ) or electrically active point defects . Townsend and Uddin reported
on ...
Damage generation may degrade the structural and / or electrical quality of the
epitaxial layers through formation of extended defects ( e . g . , stacking faults or
dislocations ) or electrically active point defects . Townsend and Uddin reported
on ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer