Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 706
... rates of He , C2F6 , and CHF3 ) , a total of only 27 experiments were carried out and analyzed . Etch rate and uniformity data were fitted by the general least- squares method to general quadratic equations that can account for in ...
... rates of He , C2F6 , and CHF3 ) , a total of only 27 experiments were carried out and analyzed . Etch rate and uniformity data were fitted by the general least- squares method to general quadratic equations that can account for in ...
Page 757
... etch rates still depends on experimental data . ( The word " substrate " is ... rate increases from zero at the threshold ( usually in the 20-40 eV range ) ... ETCHING 757 Etching Fundamentals.
... etch rates still depends on experimental data . ( The word " substrate " is ... rate increases from zero at the threshold ( usually in the 20-40 eV range ) ... ETCHING 757 Etching Fundamentals.
Page 768
... etching , or RIBE ) , or it can be introduced at the target ( chemically assisted ion - beam etching , or CAIBE ) . A. Etch Selectivity Chemical reactions can be used both to increase and to decrease the etch rate , permitting the etching ...
... etching , or RIBE ) , or it can be introduced at the target ( chemically assisted ion - beam etching , or CAIBE ) . A. Etch Selectivity Chemical reactions can be used both to increase and to decrease the etch rate , permitting the etching ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength