Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 808
... etchants . d . Special Resolution Problems with Multilayer Substrates The resolution of a particular process can be ... etchant interface . This can produce undercutting by selec- tively enhancing the etch rate of the layer in which ...
... etchants . d . Special Resolution Problems with Multilayer Substrates The resolution of a particular process can be ... etchant interface . This can produce undercutting by selec- tively enhancing the etch rate of the layer in which ...
Page 822
... etchants such as Cl with GaAs , both n- and p - GaAs etch at the same rate when the substrate is at ground [ 125 , 126 ] . Application of an appropriate negative bias has been shown to suppress the etching of 2.5 x 1017 / cm3 n - GaAs ...
... etchants such as Cl with GaAs , both n- and p - GaAs etch at the same rate when the substrate is at ground [ 125 , 126 ] . Application of an appropriate negative bias has been shown to suppress the etching of 2.5 x 1017 / cm3 n - GaAs ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength