Thin Film Processes, Volume 2 |
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Page 740
analyze the etched surfaces . Conclusions from these measurements again serve
to complement the insight gained from direct plasma diagnostics . B . End - Point
Detection Many of the previously mentioned methods for plasma diagnostics ...
analyze the etched surfaces . Conclusions from these measurements again serve
to complement the insight gained from direct plasma diagnostics . B . End - Point
Detection Many of the previously mentioned methods for plasma diagnostics ...
Page 768
V . REACTIVE ETCHING In reactive etching , chemical processes are used to
enhance the etching process . As described in the introduction , the reactive
species can be introduced in the ion source ( reactive ion - beam etching , or
RIBE ) , or ...
V . REACTIVE ETCHING In reactive etching , chemical processes are used to
enhance the etching process . As described in the introduction , the reactive
species can be introduced in the ion source ( reactive ion - beam etching , or
RIBE ) , or ...
Page 841
pyrolytic etching processes has been studied using SiCla , CCl4 , and GeCl4 ( 85
) Several gas - phase ... 239 , 241 ) , but can also etch GaAs at low laser power
densities that produce negligible temperature increases ( 76 , 140 , 242 , 243 ) .
pyrolytic etching processes has been studied using SiCla , CCl4 , and GeCl4 ( 85
) Several gas - phase ... 239 , 241 ) , but can also etch GaAs at low laser power
densities that produce negligible temperature increases ( 76 , 140 , 242 , 243 ) .
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |