Thin Film Processes, Volume 2 |
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Page 107
is formed in an enclosure by electron impact ionization , and an electron beam is
extracted through an aperture and impinges on the evaporation target , which is
the anode . It is very similar in concept to the hot hollow cathode device .
is formed in an enclosure by electron impact ionization , and an electron beam is
extracted through an aperture and impinges on the evaporation target , which is
the anode . It is very similar in concept to the hot hollow cathode device .
Page 112
C . Deposition of Compounds Deposition of compounds can be performed in two
ways : direct evaporation , in which the ... and reactive evaporation , in which the
element or elements of the compound are evaporated and react with the gas to ...
C . Deposition of Compounds Deposition of compounds can be performed in two
ways : direct evaporation , in which the ... and reactive evaporation , in which the
element or elements of the compound are evaporated and react with the gas to ...
Page 117
In other casesfor example direct evaporation of TiB2 — the deposit contains both
the monoboride and diboride phases ( 41 ) . 2 . Reactive Evaporation Processes
The difficulties involved in direct evaporation processes that are caused by ...
In other casesfor example direct evaporation of TiB2 — the deposit contains both
the monoboride and diboride phases ( 41 ) . 2 . Reactive Evaporation Processes
The difficulties involved in direct evaporation processes that are caused by ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer