Thin Film Processes, Volume 2 |
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Page 112
For example , vaporized Al atoms react with oxygen to form AlOy . Plasma -
assisted reactive evaporation processes are often used , since they activate the
reactions leading to compound formation . The activated reactive evaporation (
ARE ) ...
For example , vaporized Al atoms react with oxygen to form AlOy . Plasma -
assisted reactive evaporation processes are often used , since they activate the
reactions leading to compound formation . The activated reactive evaporation (
ARE ) ...
Page 200
For example , a typical coater system for the manufacture of compact disks
consists of loading and unloading stations , a degassing chamber , magnetron
cathodes , a disk conveyor system , and a transfer chamber for separating the
loading ...
For example , a typical coater system for the manufacture of compact disks
consists of loading and unloading stations , a degassing chamber , magnetron
cathodes , a disk conveyor system , and a transfer chamber for separating the
loading ...
Page 778
An example of the usefulness of a controllable direction of incidence is the varied
incidence to minimize redeposition and trenching in Section IV , B . Another
example is etching inclined slots for introducing air in a controlled manner
between ...
An example of the usefulness of a controllable direction of incidence is the varied
incidence to minimize redeposition and trenching in Section IV , B . Another
example is etching inclined slots for introducing air in a controlled manner
between ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer