Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 566
... excitation , and the substrate for thin film deposition is positioned in the plasma excitation region [ 3 , 4 ] . The first of these factors can contribute to gas phase genera- tion of a significant number of deposition precursors [ 5 ] ...
... excitation , and the substrate for thin film deposition is positioned in the plasma excitation region [ 3 , 4 ] . The first of these factors can contribute to gas phase genera- tion of a significant number of deposition precursors [ 5 ] ...
Page 571
... excitation : one in which only one of the reactant gases , A ( g ) , along with a noble gas diluent , X ( g ) , is plasma excited ; and a second variation in which only a noble gas diluent is plasma excited , and in which the reactant ...
... excitation : one in which only one of the reactant gases , A ( g ) , along with a noble gas diluent , X ( g ) , is plasma excited ; and a second variation in which only a noble gas diluent is plasma excited , and in which the reactant ...
Page 634
... excitation is illustrated in Fig . 6. For reactant excitation ( Figs . 5a , b , c ) , the minimum feature size is determined by the mean free path of the excited molecule . For a typical gas , Ar at 300 K , the mean free path at 10-3 ...
... excitation is illustrated in Fig . 6. For reactant excitation ( Figs . 5a , b , c ) , the minimum feature size is determined by the mean free path of the excited molecule . For a typical gas , Ar at 300 K , the mean free path at 10-3 ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength