Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 391
... flow separations and recir- culations further complicating the flow field . Figure 3 shows examples of these flow phenomena . A scaling analysis of simple axisymmetric flows relevant to vertical reactors indicates that the ratio of ...
... flow separations and recir- culations further complicating the flow field . Figure 3 shows examples of these flow phenomena . A scaling analysis of simple axisymmetric flows relevant to vertical reactors indicates that the ratio of ...
Page 392
... flow simulations have been necessary to explore the multitude of mixed convection and flow separation phenomena possible , and to identify operating conditions leading to uniform growth and sharp transitions in composition between ...
... flow simulations have been necessary to explore the multitude of mixed convection and flow separation phenomena possible , and to identify operating conditions leading to uniform growth and sharp transitions in composition between ...
Page 395
... flow to be expected , if fluid properties evaluated at the average temperature are used to calculate Ra . The presence of the side walls stabilizes the free convective flow , increasing Raer slightly above the value of Racr = 1,708 for flow ...
... flow to be expected , if fluid properties evaluated at the average temperature are used to calculate Ra . The presence of the side walls stabilizes the free convective flow , increasing Raer slightly above the value of Racr = 1,708 for flow ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength