Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 159
... flux [ 79 ] . Hg - containing compounds have very interesting properties . Hg1 - x Cd , Te , for instance , has a bandgap ranging from 0 to 1.5 eV at room temperature , depending on the composition x . A number of alloys and ...
... flux [ 79 ] . Hg - containing compounds have very interesting properties . Hg1 - x Cd , Te , for instance , has a bandgap ranging from 0 to 1.5 eV at room temperature , depending on the composition x . A number of alloys and ...
Page 186
... flux is less than the outer flux . Type I has been shown to give low ion and electron currents at the substrate and low self - bias voltages [ 68 ] . Type II systems give large ion currents and large electron currents ( about 100 times ...
... flux is less than the outer flux . Type I has been shown to give low ion and electron currents at the substrate and low self - bias voltages [ 68 ] . Type II systems give large ion currents and large electron currents ( about 100 times ...
Page 297
... flux by convection Reynolds Re : = ν 10-1-102 momentum flux by diffusion Peclet ( thermal ) Peh = Re Pr thermal flux by convection 10-1-102 thermal flux by diffusion Peclet ( mass ) mass flux by conversion Pem = Re Sc 10-1-103 mass flux ...
... flux by convection Reynolds Re : = ν 10-1-102 momentum flux by diffusion Peclet ( thermal ) Peh = Re Pr thermal flux by convection 10-1-102 thermal flux by diffusion Peclet ( mass ) mass flux by conversion Pem = Re Sc 10-1-103 mass flux ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength