Thin Film Processes, Volume 2 |
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Page 159
For these cells , quartz and stainless steel construction have worked about
equally well . A valved orifice can be used to fine - adjust the flux ( 79 ) . Hg -
containing compounds have very interesting properties . Hg1 - x Cd , Te , for
instance , has ...
For these cells , quartz and stainless steel construction have worked about
equally well . A valved orifice can be used to fine - adjust the flux ( 79 ) . Hg -
containing compounds have very interesting properties . Hg1 - x Cd , Te , for
instance , has ...
Page 186
Schematic representation of an unbalanced magnetron ( type II ) . the central flux
is less than the outer flux . Type I has been shown to give low ion and electron
currents at the substrate and low self - bias voltages [ 68 ] . Type II systems give ...
Schematic representation of an unbalanced magnetron ( type II ) . the central flux
is less than the outer flux . Type I has been shown to give low ion and electron
currents at the substrate and low self - bias voltages [ 68 ] . Type II systems give ...
Page 297
7 Schmidt mean free path characteristic length momentum diffusivity thermal
diffusivity momentum diffusivity mass diffusivity momentum flux by convection
momentum flux by diffusion thermal flux by convection thermal flux by diffusion 1 -
10 ...
7 Schmidt mean free path characteristic length momentum diffusivity thermal
diffusivity momentum diffusivity mass diffusivity momentum flux by convection
momentum flux by diffusion thermal flux by convection thermal flux by diffusion 1 -
10 ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer