Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 120
... formation of particular species in the glow discharge . Thornton [ 49 ] has discussed the analytical model illustrating the principal mechanism of radical formation in glow discharges . A detailed calculation is reported by Kushner [ 50 ] ...
... formation of particular species in the glow discharge . Thornton [ 49 ] has discussed the analytical model illustrating the principal mechanism of radical formation in glow discharges . A detailed calculation is reported by Kushner [ 50 ] ...
Page 217
... FORMATION " Fundamental effects of kinetic energy Surface cleaning by sputtering Deep etching Blending of sputtered material with incident evaporant particles Creation of suitable amount of activated centers , such as defects and ...
... FORMATION " Fundamental effects of kinetic energy Surface cleaning by sputtering Deep etching Blending of sputtered material with incident evaporant particles Creation of suitable amount of activated centers , such as defects and ...
Page 415
... formation of an ordered structure , the chemistry and kinetics of mass motion on the growth surface play an important role in the actual formation of an ordered alloy . The presence of ordering in these material is of both fundamental ...
... formation of an ordered structure , the chemistry and kinetics of mass motion on the growth surface play an important role in the actual formation of an ordered alloy . The presence of ordering in these material is of both fundamental ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength