Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 120
... formation of particular species in the glow discharge . Thornton [ 49 ] has discussed the analytical model illustrating the principal mechanism of radical formation in glow discharges . A detailed calculation is reported by Kushner [ 50 ] ...
... formation of particular species in the glow discharge . Thornton [ 49 ] has discussed the analytical model illustrating the principal mechanism of radical formation in glow discharges . A detailed calculation is reported by Kushner [ 50 ] ...
Page 217
... FORMATION Fundamental effects of kinetic energy Surface cleaning by sputtering Deep etching Blending of sputtered material with incident evaporant particles Creation of suitable amount of activated centers , such as defects and ...
... FORMATION Fundamental effects of kinetic energy Surface cleaning by sputtering Deep etching Blending of sputtered material with incident evaporant particles Creation of suitable amount of activated centers , such as defects and ...
Page 415
... formation of an ordered structure , the chemistry and kinetics of mass motion on the growth surface play an important role in the actual formation of an ordered alloy . 1- The presence of ordering in these material is of both ...
... formation of an ordered structure , the chemistry and kinetics of mass motion on the growth surface play an important role in the actual formation of an ordered alloy . 1- The presence of ordering in these material is of both ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength