Thin Film Processes, Volume 2 |
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Page 217
Various enhancements of the method , including the addition of a TABLE I
INFLUENCE OF KINETIC ENERGY ON FILM FORMATION Fundamental effects
of kinetic energy Influence on film formation Surface cleaning by sputtering ...
Various enhancements of the method , including the addition of a TABLE I
INFLUENCE OF KINETIC ENERGY ON FILM FORMATION Fundamental effects
of kinetic energy Influence on film formation Surface cleaning by sputtering ...
Page 415
This long - range spontaneous ordering of the Al and Ga atoms in the crystal
results in the formation of a natural monolayer superlattice . The degree of
ordering with OMVPE Al , Gal - As depends on growth temperature , substrate
orientation ...
This long - range spontaneous ordering of the Al and Ga atoms in the crystal
results in the formation of a natural monolayer superlattice . The degree of
ordering with OMVPE Al , Gal - As depends on growth temperature , substrate
orientation ...
Page 548
The main conclusions of this work indicated that the minimum temperature for
epitaxial growth can be reduced through the use of a plasma to induce SiH4
decomposition , and that the formation of stacking faults and the growth of
twinned ...
The main conclusions of this work indicated that the minimum temperature for
epitaxial growth can be reduced through the use of a plasma to induce SiH4
decomposition , and that the formation of stacking faults and the growth of
twinned ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer