Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 75
... function of power . This also points out the problem of trying to measure a deposition rate due simply to the emission level of a species : The emission is a quadratic function of the current , whereas the deposition rate is generally a ...
... function of power . This also points out the problem of trying to measure a deposition rate due simply to the emission level of a species : The emission is a quadratic function of the current , whereas the deposition rate is generally a ...
Page 402
... function of the angle about a principal Bragg reflection , e.g. , ( 004 ) . The angular difference between the GaAs substrate peak and the epilayer peak yields composi- tional information . This angular separation is directly related to ...
... function of the angle about a principal Bragg reflection , e.g. , ( 004 ) . The angular difference between the GaAs substrate peak and the epilayer peak yields composi- tional information . This angular separation is directly related to ...
Page 528
... function of E , and ƒ ( E ) is the electron energy distribution function and gives the fraction of free electrons having a given energy . The integration is carried out over all possible electron energies . The square root term in Eq ...
... function of E , and ƒ ( E ) is the electron energy distribution function and gives the fraction of free electrons having a given energy . The integration is carried out over all possible electron energies . The square root term in Eq ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength