Thin Film Processes, Volume 2 |
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Page 75
an apparatus function to account for the collection efficiency of the detector at that
wavelength . If the wavelengths are similar , the emission intensities then become
proportional only to the respective densities and the Einstein coefficients .
an apparatus function to account for the collection efficiency of the detector at that
wavelength . If the wavelengths are similar , the emission intensities then become
proportional only to the respective densities and the Einstein coefficients .
Page 402
The diffracted x - ray intensity from the sample is obtained as a function of the
angle about a principal Bragg reflection , e . g . , ( 004 ) . The angular difference
between the GaAs substrate peak and the epilayer peak yields compositional ...
The diffracted x - ray intensity from the sample is obtained as a function of the
angle about a principal Bragg reflection , e . g . , ( 004 ) . The angular difference
between the GaAs substrate peak and the epilayer peak yields compositional ...
Page 528
The cross - section of an electron / particle inelastic collision is proportional to the
probability that this inelastic collision will occur and is a function of the electron
energy . If the energy of the electron is lower than the required threshold energy ...
The cross - section of an electron / particle inelastic collision is proportional to the
probability that this inelastic collision will occur and is a function of the electron
energy . If the energy of the electron is lower than the required threshold energy ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer