Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 288
... gas - phase and surface reactions . Gas - phase reactions become progressively important with increasing temperature and partial pressure of the reactants . At large reactant concentrations , gas - phase reactions may eventually lead to ...
... gas - phase and surface reactions . Gas - phase reactions become progressively important with increasing temperature and partial pressure of the reactants . At large reactant concentrations , gas - phase reactions may eventually lead to ...
Page 384
... GAS - PHASE AND SURFACE REACTION MECHANISMS The chemical mechanisms underlying OMVPE are complex , involving both gas - phase and surface reactions . The role of gas - phase reactions decreases with reduced temperature and partial ...
... GAS - PHASE AND SURFACE REACTION MECHANISMS The chemical mechanisms underlying OMVPE are complex , involving both gas - phase and surface reactions . The role of gas - phase reactions decreases with reduced temperature and partial ...
Page 462
... gas phase , the lateral diffusion of photoproducts imposes a limit on the smallest features sizes obtainable by photo - assisted film deposition , and while this can be suppressed to some extent by controlling the identity and pressure ...
... gas phase , the lateral diffusion of photoproducts imposes a limit on the smallest features sizes obtainable by photo - assisted film deposition , and while this can be suppressed to some extent by controlling the identity and pressure ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength