Thin Film Processes, Volume 2 |
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Page 311
In another type of batch reactor , the Vapox 6000 by Pacific Western Systems (
237 ) , separates gases flow laminarly through alternating slots in a water -
cooled nozzle array . Mixing takes place within the 2 . 5 mm space between the
nozzle ...
In another type of batch reactor , the Vapox 6000 by Pacific Western Systems (
237 ) , separates gases flow laminarly through alternating slots in a water -
cooled nozzle array . Mixing takes place within the 2 . 5 mm space between the
nozzle ...
Page 312
The undiluted reactant gases are fed into one end of the fused quartz tube ,
except for lowtemperature hydride processes , such as deposition of oxides at
400°C and doped poly - Si at 600°C . To obtain acceptable uniformities in these
cases ...
The undiluted reactant gases are fed into one end of the fused quartz tube ,
except for lowtemperature hydride processes , such as deposition of oxides at
400°C and doped poly - Si at 600°C . To obtain acceptable uniformities in these
cases ...
Page 571
2 ) There are at least two variations of the remote PECVD process defined by
which of the process gases is subjected to ... along with a noble gas diluent , X ( g
) , is plasma excited ; and a second variation in which only a noble gas diluent is
...
2 ) There are at least two variations of the remote PECVD process defined by
which of the process gases is subjected to ... along with a noble gas diluent , X ( g
) , is plasma excited ; and a second variation in which only a noble gas diluent is
...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer