Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 144
... geometry of a conical cell with respect to the substrate , where D is the radius of the substrate , L is the distance from the top of the cell to the substrate center , A is the opening of the cell , and 0 is the projected cell ...
... geometry of a conical cell with respect to the substrate , where D is the radius of the substrate , L is the distance from the top of the cell to the substrate center , A is the opening of the cell , and 0 is the projected cell ...
Page 194
... geometry . For example , in the case of large , planar magnetron sources ( e.g. , > 2 ft . long ) , gradients in reactive - gas partial pressure along the length of the source usually cause arcing , un- stable operation , and nonuniform ...
... geometry . For example , in the case of large , planar magnetron sources ( e.g. , > 2 ft . long ) , gradients in reactive - gas partial pressure along the length of the source usually cause arcing , un- stable operation , and nonuniform ...
Page 662
... geometry could be reflected in the final deposit geometry . Back reactions between product molecules and previously deposited or substrate Si have also been shown to produce volcano profiles [ 66 ] . Several models have been developed ...
... geometry could be reflected in the final deposit geometry . Back reactions between product molecules and previously deposited or substrate Si have also been shown to produce volcano profiles [ 66 ] . Several models have been developed ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength