Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 325
... glass structure , and hence the diffusion prop- erties . Triethylarsenate is slightly superior as a diffusion source because the resulting glass films do not lead to arsenic pile - up at the silicon surface [ 317 ] . 2. Borosilicates ...
... glass structure , and hence the diffusion prop- erties . Triethylarsenate is slightly superior as a diffusion source because the resulting glass films do not lead to arsenic pile - up at the silicon surface [ 317 ] . 2. Borosilicates ...
Page 328
... glasses ranges usually from 3 to 5 wt % B and P each , depending on the flow temperature requirements . Higher concentrations tend to impair the chemical stability of the glass , especially in the state before fusion where the glass is ...
... glasses ranges usually from 3 to 5 wt % B and P each , depending on the flow temperature requirements . Higher concentrations tend to impair the chemical stability of the glass , especially in the state before fusion where the glass is ...
Page 541
... Glasses Phosphosilicate glass ( PSG ) and borophosphosilicate glass ( BPSG ) can be readily deposited by PECVD [ 83 ] . Plasma - PSG [ 111 ] is frequently used as the interconductor layer between aluminum metallization , since it pro ...
... Glasses Phosphosilicate glass ( PSG ) and borophosphosilicate glass ( BPSG ) can be readily deposited by PECVD [ 83 ] . Plasma - PSG [ 111 ] is frequently used as the interconductor layer between aluminum metallization , since it pro ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength