Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 306
... heat transfer analysis , reactor geometry effects , symmetry breaking , mass transport limited growth . One - dimensional , film theory type model , mass transfer limited growth . Atmospheric and SiH4 → epi - Si [ 91,92 ] reduced ...
... heat transfer analysis , reactor geometry effects , symmetry breaking , mass transport limited growth . One - dimensional , film theory type model , mass transfer limited growth . Atmospheric and SiH4 → epi - Si [ 91,92 ] reduced ...
Page 389
... heat transfer analysis , reactor geometry effects , flow transitions , mass - transport - limited growth , transients in the growth of heterojunctions Three - dimensional , nonaxisymmetric flows , mass and heat transfer analysis ...
... heat transfer analysis , reactor geometry effects , flow transitions , mass - transport - limited growth , transients in the growth of heterojunctions Three - dimensional , nonaxisymmetric flows , mass and heat transfer analysis ...
Page 777
... heating generated by the ion beam , and it is seldom worth trying to reduce extraneous heating by special configurations . In removing the ion - beam heat input , the basic problem is that heat transfer in a vacuum is poor . In ...
... heating generated by the ion beam , and it is seldom worth trying to reduce extraneous heating by special configurations . In removing the ion - beam heat input , the basic problem is that heat transfer in a vacuum is poor . In ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength