Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 88
... heating , etc. , particularly for high - deposition- rate conditions . Therefore the pumping system is usually based ... heating can be accomplished by radiant heaters with refractory metal wires or quartz lamps acting as heat sources ...
... heating , etc. , particularly for high - deposition- rate conditions . Therefore the pumping system is usually based ... heating can be accomplished by radiant heaters with refractory metal wires or quartz lamps acting as heat sources ...
Page 98
... Heated Sources Induction heating has the following advantages over radiation heating : ( 1 ) As part of the energy is coupled directly to the evaporant , it is not necessary to produce temperatures greatly in excess of the vaporization ...
... Heated Sources Induction heating has the following advantages over radiation heating : ( 1 ) As part of the energy is coupled directly to the evaporant , it is not necessary to produce temperatures greatly in excess of the vaporization ...
Page 777
... heating of the target is usually less than 10-20 % of the heating generated by the ion beam , and it is seldom worth trying to reduce extraneous heating by special configurations . In removing the ion - beam heat input , the basic ...
... heating of the target is usually less than 10-20 % of the heating generated by the ion beam , and it is seldom worth trying to reduce extraneous heating by special configurations . In removing the ion - beam heat input , the basic ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength