Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 88
... heating , etc. , particularly for high - deposition- rate conditions . Therefore the pumping system is usually based ... heating can be accomplished by radiant heaters with refractory metal wires or quartz lamps acting as heat sources ...
... heating , etc. , particularly for high - deposition- rate conditions . Therefore the pumping system is usually based ... heating can be accomplished by radiant heaters with refractory metal wires or quartz lamps acting as heat sources ...
Page 98
... Heated Sources Induction heating has the following advantages over radiation heating : ( 1 ) As part of the energy is coupled directly to the evaporant , it is not necessary to produce temperatures greatly in excess of the vaporization ...
... Heated Sources Induction heating has the following advantages over radiation heating : ( 1 ) As part of the energy is coupled directly to the evaporant , it is not necessary to produce temperatures greatly in excess of the vaporization ...
Page 777
... heating of the target is usually less than 10-20 % of the heating generated by the ion beam , and it is seldom worth trying to reduce extraneous heating by special configurations . In removing the ion - beam heat input , the basic ...
... heating of the target is usually less than 10-20 % of the heating generated by the ion beam , and it is seldom worth trying to reduce extraneous heating by special configurations . In removing the ion - beam heat input , the basic ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength