Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 36
... higher pressures . However , high - pressure operation also results in two negative effects : decreased transport of sputtered species , and lack of directionality for ions hitting the cathode . The first problem is due to increased gas ...
... higher pressures . However , high - pressure operation also results in two negative effects : decreased transport of sputtered species , and lack of directionality for ions hitting the cathode . The first problem is due to increased gas ...
Page 43
... higher , often by two to three orders of magnitude . A semiempirical relation for this much higher conductivity was developed by Bohm [ 11 ] , who found GB = en / 16B , ( 6.10 ) which often agrees with experimental results within a ...
... higher , often by two to three orders of magnitude . A semiempirical relation for this much higher conductivity was developed by Bohm [ 11 ] , who found GB = en / 16B , ( 6.10 ) which often agrees with experimental results within a ...
Page 158
... higher purity and more precise stoichiometry control . The II - VI substrates are expensive and fragile , are unavailable in large sizes , and contain a much higher density of lattice imperfections than do Si and GaAs . The latter are ...
... higher purity and more precise stoichiometry control . The II - VI substrates are expensive and fragile , are unavailable in large sizes , and contain a much higher density of lattice imperfections than do Si and GaAs . The latter are ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength