Thin Film Processes, Volume 2 |
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Page 36
At these pressures , the electron is more likely to have an ionizing collision
between the electrodes , and indeed , the plasmas do become denser and more
conductive at higher pressures . However , high - pressure operation also results
in ...
At these pressures , the electron is more likely to have an ionizing collision
between the electrodes , and indeed , the plasmas do become denser and more
conductive at higher pressures . However , high - pressure operation also results
in ...
Page 43
In practice , when compared to experimental results , often the conductivity is
significantly higher , often by two to three orders of magnitude . A semiempirical
relation for this much higher conductivity was developed by Bohm ( 11 ) , who
found ...
In practice , when compared to experimental results , often the conductivity is
significantly higher , often by two to three orders of magnitude . A semiempirical
relation for this much higher conductivity was developed by Bohm ( 11 ) , who
found ...
Page 158
Because of their higher vapor pressure , both the source temperature and the
growth temperature are lower than those of the III - V compounds . For most II - VI
compounds , the evaporation is nearly congruent and may be expressed as AB ...
Because of their higher vapor pressure , both the source temperature and the
growth temperature are lower than those of the III - V compounds . For most II - VI
compounds , the evaporation is nearly congruent and may be expressed as AB ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |